1200V增強型碳化硅縱向結型場效應晶體管功率模塊

摘要：最近的模塊研發工作已經生產出封裝在SP1模組中的快速開關，1200V、13mΩ、增強型SiC JFET半橋模塊。這些模塊由36mm2 SiC VJFET和23mm2肖特基管的并聯組合而成。在ID=100A條件下，獲得2.7mΩ-cm2的比導通電阻。開關測試采用了標準的雙脈沖感性負載電路，在600V、100 A、溫度分別為25℃和150℃的條件下，得到了歷史最低的總開關損耗——100A、150℃下為1.25mJ。本文詳細介紹測試的開關性能、所采用的柵極驅動電路，以及獲得這些結果推薦使用的緩沖器。 敘詞：模塊 SiC 柵極驅動 開關損耗 緩沖器 Abstract： Latest module research has made possible the production of fast switch that packed in SP1 module suit, an enhanced SiC JFET half-bridge module with 1200V and 13m. The modules are parallel-connected with 36mm2 SiC VJFET and 23mm2 SBD. Under ID=100A, it achieves the specific on-resistance 2.7m-cm2. Standard dual-pulse inductive load circuit is applied to test the switch. Under the condition of 600V, 100A, with temperature respectively being 25 and 150, it achieves record-lowest general switch loss: with 100A, and 150, it is 1.25mJ. The article introduces in detail the function of the switch, the grid drive circuit applied, and the bumper recommended to achieve the rusults. Keyword：Module, SiC, Grid drive, Switch loss, Bumper